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XN0D873|XN1D873 Datasheet

  • XN0D873|XN1D873

  • Composite Device - Composite Transistors

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Composite Transistors
XN0D873
(XN1D873)
Silicon N-channel junction FET
Unit: mm
For analog switching
鈻?/div>
Features
鈥?/div>
Two elements incorporated into one package (Drain-coupled FETs)
鈥?/div>
Reduction of the mounting area and assembly cost by one half
鈥?/div>
Low-frequency and low-noise J-FET
3
2.90
+0.20
鈥?.05
1.9
鹵0.1
0.95 0.95
4
5
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
0.16
+0.10
鈥?.06
2
0.30
+0.10
鈥?.05
1
0.65
鹵0.15
鈻?/div>
Basic Part Number
鈥?/div>
2SK1103
脳
2
10藲
1.1
+0.2
鈥?.1
Parameter
Gate-drain surrender voltage
Drain current
Gate current
Total power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
T
T
ch
T
stg
Rating
鈭?0
30
10
300
150
鈭?5
to
+150
Unit
V
mA
mA
mW
擄C
擄C
1: Gate (FET1)
2: Gate (FET2)
3: Source (FET2)
EIAJ: SC-74A
0 to 0.1
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
1.1
+0.3
鈥?.1
4: Drain
5: Source (FET1)
Mini5-G1 Package
Marking Symbol: OC
Internal Connection
3
4
5
FET2
FET1
2
1
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Gate-drain surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate-source cutoff voltage
Drain-source ON resistance
Mutual conductance
Short-circuit forward transfer
capacitance (Common-source)
Short-circuit output
capacitance (Common-source)
Reverse transfer capacitance
(Common-source)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
C
oss
C
rss
1.5
1.5
pF
pF
Symbol
V
GDS
I
DSS
I
GSS
V
GSC
R
DS(on)
gm
C
iss
Conditions
I
G
= 鈭?0 碌A(chǔ),
V
DS
=
0
V
DS
=
10 V, V
GS
=
0
V
GS
= 鈭?0
V, V
DS
=
0
V
DS
=
10 V, I
D
=
10
碌A(chǔ)
V
DS
=
10 mV, V
GS
=
0
V
DS
=
10 V, I
D
=
1 mA, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
1.8
鈭?.5
300
2.5
7
Min
鈭?0
0.2
6.0
鈭?0
鈭?.5
Typ
Max
Unit
V
mA
nA
V
鈩?/div>
mS
pF
Note) The part number in the parenthesis shows conventional part number.
Publication date: December 2002
SJJ00119CED
0.4
鹵0.2
5藲
1

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